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    Chinese researchers extend future memory endurance 100-fold in semiconductor advance

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    Source: South China Morning Post
    Published: 2026-09-13 20:52 UTC+10:00
    Section: General
    Factuality Score: 100
    Opinion Category: Neutral
    Topics: Technology & AI, China, Technology
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    Snippet:
    Restricting nitrogen-vacancy movement in wurtzite ferroelectrics looks to improve the reliability of next-generation storage, scientists find
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